Dry etching of Combined Gallium Nitride Epitaxial Layer and Silicon Carbide Substrate
Subject: Dry etching of Combined Gallium Nitride Epitaxial Layer and Silicon Carbide SubstrateSolicitation Number: 80NSSC26936816QNotice Type: SOLICITNAICS: 334413Set-Aside: No Set aside usedNotice Published: 07-06-26Response Due: 07-10-26Agency: National Aeronautics and Space AdministrationOffice: NATIONAL AERONAUTICS AND SPACE ADMINISTRATIONContact: Monica Wilson This email address is being protected from spambots. You need JavaScript enabled to view it.Office Address: STENNIS SPACE CENTER, MS 39529
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