Dry etching of Combined Gallium Nitride Epitaxial Layer and Silicon Carbide Substrate


Subject: Dry etching of Combined Gallium Nitride Epitaxial Layer and Silicon Carbide Substrate
Solicitation Number: 80NSSC26936816Q
Notice Type: SOLICIT
NAICS: 334413
Set-Aside: No Set aside used
Notice Published: 07-06-26
Response Due: 07-10-26

Agency: National Aeronautics and Space Administration
Office: NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
Contact: Monica Wilson This email address is being protected from spambots. You need JavaScript enabled to view it.
Office Address: STENNIS SPACE CENTER, MS 39529



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