Silicon and Silicon/Germanium Epitaxial Wafers
Subject: Silicon and Silicon/Germanium Epitaxial WafersSolicitation Number: 1333ND26QNB030152Notice Type: SOLICITNAICS: 334413Set-Aside: Total Small BusinessNotice Published: 05-06-26Response Due: 05-12-26Agency: Department of CommerceOffice: NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGYContact: Erik Frycklund This email address is being protected from spambots. You need JavaScript enabled to view it.Office Address: GAITHERSBURG, MD 20899Related Notices:
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This solicitation is being amended again to answer public questions raised. The questions and the NIST response have been addressed as an updated attachment. No additonal changes have been made. This solicitation is being amended to answer public questions raised and to update a minimum specification. Question 1: For line items 1-7, could you please confirm the substrate diameter? Answer 1: The substrate diameter is 100 mm. Question 2: What is the preferred method of growth (1) CVD (Chemical Vapor Deposition) or (2) MBE (Molecular Beam Epitaxy). Answer 2: (B) The government is not specifying the production method and any production method that yields wafers meeting all specifications including thickness, composition, and coherency would be acceptable. Vendors may elect to use different growth methods for different film stacks (e.g. MBE for thin stacks, and CVD for thick films). Minimum specification addition: For SiGe films, the composition tolerance is 5 atomic percent. For example Si0.70Ge0.30 means Si0.70±0.05Ge0.30±0.05, and a film with a composition of Si0.67Ge0.33 would be within specification for a nominal Si0.70Ge0.30 requirement. No additional changes have been made. Please see attached document.